STN EN IEC 60749-34-1
| Name: | STN EN IEC 60749-34-1 |
| Validity: | Valid |
| Number of pages: | 36 |
| Language: |
EN
|
| Paper: | 17,20€ |
| Electronic version |
a) Only read (without ability to print and copy)
15,48€ b) Without ability to print, with ability to copy (printscreen) 17,20€ c) With ability to print and copy (printscreen) 22,36€ |
| Slovak title | Polovodičové súčiastky. Mechanické a klimatické skúšobné metódy. Časť 34-1: Skúška cyklického zaťaženia výkonových polovodičových modulov |
| English title | Semiconductor devices - Mechanical and climatic test methods - Part 34-1: Power cycling test for power semiconductor module |
| Release Date: | 01. 11. 2025 |
| Date of withdrawal: | |
| ICS: | 31.080.01 |
| Sorting character/National clasification code | 35 8799 |
| Level of incorporation: | idt EN IEC 60749-34-1:2025, idt IEC 60749-34-1:2025 |
| Official Journal | 10/25 |
| Amendments | |
| Replaced by: | |
| Repleces: | |
| Note in Official Journal: | |
| Subject of the standard: | IEC 60749-34-1:2025 describes a test method that is used to determine the capability of power semiconductor modules to withstand thermal and mechanical stress resulting from cycling the power dissipation of the internal semiconductors and the internal connectors. It is based on IEC 60749-34, but is developed specifically for power semiconductor module products, including insulated-gate bipolar transistor (IGBT), metal-oxide-semiconductor field-effect transistor (MOSFET), diode and thyristor. If there is a customer request for an individual use or an application specific guideline (for example ECPE Guideline AQG 324), details of the test method can be based on these requirements if they deviate from the content of this document. This test caused wear-out and is considered destructive. |
| Preview: | Náhľad normy (PDF) |