STN EN IEC 63373
| Name: | STN EN IEC 63373 |
| Validity: | Valid |
| Number of pages: | 20 |
| Language: |
EN
|
| Paper: | 14,10€ |
| Electronic version |
a) Only read (without ability to print and copy)
12,69€ b) Without ability to print, with ability to copy (printscreen) 14,10€ c) With ability to print and copy (printscreen) 18,33€ |
| Slovak title | Pokyny pre dynamickú metódu skúšania odporu pre zariadenia na konverziu energie založené na GaN HEMT |
| English title | Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices |
| Release Date: | 01. 06. 2022 |
| Date of withdrawal: | |
| ICS: | 31.080.99 |
| Sorting character/National clasification code | 35 1610 |
| Level of incorporation: | idt EN IEC 63373:2022, idt IEC 63373:2022 |
| Official Journal | 05/22 |
| Amendments | |
| Replaced by: | |
| Repleces: | |
| Note in Official Journal: | |
| Subject of the standard: | In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. This publication describes the guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following: a) GaN enhancement and depletion-mode discrete power devices [1] b) GaN integrated power solutions c) the above in wafer and package levels Wafer level tests are recommended to minimize parasitic effects when performing high precision measurements. For package level tests, the impact of package thermal characteristics should be considered so as to minimize any device under test (DUT) self-heating implications. The prescribed test methods may be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications. |
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